On-Demand Fabrication of Si/SiO2 Nanowire Arrays by Nanosphere Lithography and Subsequent Thermal Oxidation
作者：
Cao, Huaxiang;Li, Xinhua;Zhou, Bukang;Chen, Tao;Shi, Tongfei;...
通讯作者：
Xinhua Li
作者机构：
Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, People’s Republic of China
University of Science and Technology of China, Hefei, People’s Republic of China
通讯机构：
Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, People’s Republic of China
语种：
英文
关键词：
Metal-assisted chemical etching;Morphology evolution;Nano Sphere Lithography;Nanowire arrays;Polystyrene particle;Quantitative description;Thermal oxidation;Thermal oxidation process
期刊：
Nanoscale Research Letters
ISSN：
1931-7573
年：
2017
卷：
12
期：
1
页码：
105
基金类别：
This work was supported by the National Natural Science Foundation of China (Grant Nos. 51472247, 51671182).
摘要：
We demonstrate the fabrication of the large-area arrays of vertically aligned Si/SiO2 nanowires with full tunability of the geometry of the single nanowires by the metal-assisted chemical etching technique and the following thermal oxidation process. To fabricate the geometry controllable Si/SiO2 nanowire (NW) arrays, two critical issues relating with the size control of polystyrene reduction and oxide thickness evolution are investigated. Through analyzing the morphology evolutions of polystyrene particles, we give a quantitative description on the diameter variations of polystyrene particles with the etching time of plasma etching. Based on this, pure Si NW arrays with ...
